JPH0230588B2 - - Google Patents

Info

Publication number
JPH0230588B2
JPH0230588B2 JP57070169A JP7016982A JPH0230588B2 JP H0230588 B2 JPH0230588 B2 JP H0230588B2 JP 57070169 A JP57070169 A JP 57070169A JP 7016982 A JP7016982 A JP 7016982A JP H0230588 B2 JPH0230588 B2 JP H0230588B2
Authority
JP
Japan
Prior art keywords
transistor
region
conductivity type
emitter
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57070169A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57183067A (en
Inventor
Pieeru Roje Berunaaru
Berutonje Berunaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS57183067A publication Critical patent/JPS57183067A/ja
Publication of JPH0230588B2 publication Critical patent/JPH0230588B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57070169A 1981-04-29 1982-04-26 Semiconductor device Granted JPS57183067A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8108550A FR2505102B1 (fr) 1981-04-29 1981-04-29 Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree

Publications (2)

Publication Number Publication Date
JPS57183067A JPS57183067A (en) 1982-11-11
JPH0230588B2 true JPH0230588B2 (en]) 1990-07-06

Family

ID=9257908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57070169A Granted JPS57183067A (en) 1981-04-29 1982-04-26 Semiconductor device

Country Status (5)

Country Link
US (1) US4547791A (en])
JP (1) JPS57183067A (en])
DE (1) DE3214893A1 (en])
FR (1) FR2505102B1 (en])
GB (1) GB2097585B (en])

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
US5333282A (en) * 1982-09-29 1994-07-26 Hitachi, Ltd. Semiconductor integrated circuit device with at least one bipolar transistor arranged to provide a direct connection between a plurality of MOSFETs
DE3380105D1 (en) * 1982-09-29 1989-07-27 Hitachi Ltd Semiconductor integrated circuit device
JPS5994452A (ja) * 1982-11-22 1984-05-31 Fuji Electric Co Ltd 複合形トランジスタ
DE3301648A1 (de) * 1983-01-19 1984-07-19 Siemens AG, 1000 Berlin und 8000 München Misfet mit eingangsverstaerker
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
GB2164790A (en) * 1984-09-19 1986-03-26 Philips Electronic Associated Merged bipolar and field effect transistors
JPS6174362A (ja) * 1984-09-19 1986-04-16 Hitachi Ltd 半導体装置
US4760431A (en) * 1985-09-30 1988-07-26 Kabushiki Kaisha Toshiba Gate turn-off thyristor with independent turn-on/off controlling transistors
JPH0654796B2 (ja) * 1986-07-14 1994-07-20 株式会社日立製作所 複合半導体装置
US4727046A (en) * 1986-07-16 1988-02-23 Fairchild Semiconductor Corporation Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases
FR2712428B1 (fr) * 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Commutateur bidirectionnel à commande en tension.
JP2759624B2 (ja) * 1995-04-19 1998-05-28 エルジイ・セミコン・カンパニイ・リミテッド 半導体素子の構造及びその製造方法
US5763915A (en) * 1996-02-27 1998-06-09 Magemos Corporation DMOS transistors having trenched gate oxide
US6242967B1 (en) 1998-06-15 2001-06-05 Fuji Electric Co., Ltd. Low on resistance high speed off switching device having unipolar transistors
JP2001085463A (ja) * 1999-09-09 2001-03-30 Rohm Co Ltd 半導体チップおよびそれを用いた半導体装置
US6774439B2 (en) * 2000-02-17 2004-08-10 Kabushiki Kaisha Toshiba Semiconductor device using fuse/anti-fuse system
DE10110458A1 (de) * 2001-03-05 2002-10-17 Kord Gharachorloo Wahid Der CMOS-Inverter im LAVE-Technologie (lateral vertikal)
CN100422753C (zh) * 2005-08-12 2008-10-01 上海三基电子工业有限公司 一种用于车载电子干扰模拟器的直流功率放大器
US7833282B2 (en) * 2006-02-27 2010-11-16 Mandpe Aditi H Eustachian tube device and method
US8742490B2 (en) * 2011-05-02 2014-06-03 Monolithic Power Systems, Inc. Vertical power transistor die packages and associated methods of manufacturing

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1559610A (en]) * 1967-06-30 1969-03-14
JPS4836975B1 (en]) * 1967-12-06 1973-11-08
US3609470A (en) * 1968-02-19 1971-09-28 Ibm Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum
GB1518961A (en) * 1975-02-24 1978-07-26 Rca Corp Amplifier circuits
FR2311452A1 (fr) * 1975-05-16 1976-12-10 Thomson Csf Dispositif a semi-conducteur pour commutation rapide de puissance et appareil comportant un tel dispositif
DE2610122C3 (de) * 1976-03-11 1978-11-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Dreipolige Halbleiteranordnung
JPS5455178A (en) * 1977-10-12 1979-05-02 Hitachi Ltd Protecting device
FR2422258A1 (fr) * 1978-01-19 1979-11-02 Radiotechnique Compelec Dispositif semiconducteur monolithique a transistors de types mos et bipolaire
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
US4329705A (en) * 1979-05-21 1982-05-11 Exxon Research & Engineering Co. VMOS/Bipolar power switching device
US4286175A (en) * 1979-05-21 1981-08-25 Exxon Research & Engineering Co. VMOS/Bipolar dual-triggered switch
US4356416A (en) * 1980-07-17 1982-10-26 General Electric Company Voltage controlled non-saturating semiconductor switch and voltage converter circuit employing same

Also Published As

Publication number Publication date
US4547791A (en) 1985-10-15
FR2505102A1 (fr) 1982-11-05
FR2505102B1 (fr) 1986-01-24
DE3214893A1 (de) 1982-11-18
GB2097585A (en) 1982-11-03
GB2097585B (en) 1985-02-13
JPS57183067A (en) 1982-11-11

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